Illumination optical system, exposure apparatus, and device manufacturing method

ABSTRACT

An illumination optical system for illuminating an irradiated plane M with illumination light provided from a light source includes a spatial light modulator, which is arranged in an optical path of the illumination optical system and forms a desired light intensity distribution at a pupil position of the illumination optical system or a position optically conjugated with the pupil position, and a diffuser, which is arranged at an incidence side of the spatial light modulator through which the illumination light enters.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a Division of application Ser. No. 12/252,283 filed Oct. 15,2008. The disclosure of the prior applications is hereby incorporated byreference herein in its entirety. This application claims the benefit ofJapanese Patent Application No, 2007-269189, filed on Oct. 16, 2007, andU.S. Provisional Application No. 60/960,949, filed on Oct. 22, 2007.

FIELD

The present invention relates to an illumination optical system for usein an exposure apparatus that manufactures a device, such as asemiconductor device, a liquid crystal display device, an imagingdevice, and a thin-film magnetic head, in a photolithography process, anexposure apparatus including such an illumination optical system, and adevice manufacturing method with such an exposure apparatus.

BACKGROUND

In recent years, the integration of patterns that are formed on a maskhas become higher. Thus, to accurately transfer a fine pattern onto awafer, a mask pattern must be illuminated with the optimal illuminancedistribution. Accordingly, a technique that has drawn attention performsmodified illumination at a pupil position of an illumination opticalsystem for an exposure apparatus to form an annular-shaped ormultipole-shaped (e.g., quadrupole) light intensity distribution andvaries the light intensity distribution on a secondary light source,which is formed on a rear focal plane of a micro-fly's eye lens. Thistechnique increases the focal depth and resolution of a projectionoptical system.

To transform light from a light source to light having annular-shaped ormultipole-shaped light intensity distribution at a pupil position, forexample, Japanese Laid-Out Patent Publication No. 2002-353105 disclosesan exposure apparatus including a movable multi-mirror (e.g., digitalmicromirror device (DMD)), which includes many microscopic elementsmirrors that are arranged in an array. The inclination angle andinclination direction of each of the element mirrors are varied to forma predetermined light intensity distribution at a pupil position of theillumination optical system or a position conjugated with the pupilposition (secondary light source position formed at a rear focal planeof a micro-fly's eye lens). In this exposure apparatus, light enteringeach mirror element is reflected by a reflection surface of the mirrorelement, deflected by a predetermined angle in a predetermineddirection, and transformed to light having a predetermined lightintensity distribution at the pupil position of the illumination opticalsystem. Exposure is performed by setting the inclination angle andinclination direction of each mirror element in the movable multi-mirrorso that a secondary light source image formed on a rear focal plane ofthe micro-fly's eye lens has the optimal light intensity distributionthat corresponds to the pattern or the like of the mask during exposure.

SUMMARY

In the above-described exposure apparatus, a laser light source is usedas the light source. The cross-section of the laser light emitted fromthe laser light source includes variations in the light intensity.Accordingly, when using such laser light to form an annular-shaped ormulti-pole shaped light intensity distribution at the pupil position ofthe illumination optical system, a light distribution shape(cross-section of light beam) includes light intensity variations(non-uniformity of light intensity).

It is an object of the present invention to provide an illuminationoptical system, an exposure apparatus including such an illuminationoptical system, and a device manufacturing method with such an exposureapparatus that easily forms the desired light intensity distribution inwhich illumination non-uniformity is not distinctive at the pupilposition of the illumination optical system or a position conjugatedwith the pupil position even when the light from a light source includeslight intensity variations (non-uniformity) in the cross-section oflight.

To summarize the present invention, several aspects, advantages, andnovel features of the present invention are described below. However,such advantages may not all be achieved in certain aspects of thepresent invention. In such a manner, the present invention may bepracticed so as to achieve or optimize one advantage or a series ofadvantages without having to achieve the advantages suggested orproposed herein.

The structure of an embodiment of the present invention will now bediscussed. However, the present invention is not limited to thisembodiment.

An illumination optical system according to one embodiment of thepresent invention illuminates an irradiated plane with illuminationlight provided from a light source. The illumination optical systemincludes a spatial light modulator which is arranged in an optical pathof the illumination optical system and forms a desired light intensitydistribution at a pupil position of the illumination optical system or aposition optically conjugated with the pupil position. A diffuser isarranged at an incidence side of the spatial light modulator throughwhich the illumination light enters and diffuses the illumination lightentering the spatial light modulator.

An exposure apparatus according to one embodiment of the presentinvention transfers a pattern of a mask onto a photosensitive substrate.The exposure apparatus includes an illumination optical system accordingto the present invention which illuminates the mask that is arranged onan irradiated plane.

A device manufacturing method according to one embodiment of the presentinvention includes exposing a pattern of a mask onto a photosensitivesubstrate using an exposure apparatus according to the presentinvention, developing the photosensitive substrate onto which thepattern has been transferred to form a mask layer shaped incorrespondence with the pattern on a surface of the photosensitivesubstrate, and processing the surface of the photosensitive substratethrough the mask layer.

The illumination optical system according to one embodiment of thepresent invention includes a diffuser which diffuses illumination lightthan enters a spatial light modulator which forms a desirable lightintensity distribution at a pupil position of the illumination opticalsystem or a position optically conjugated with the pupil position. Thus,based on the diffused illumination light, the spatial light modulatorforms the desired light intensity distribution at the pupil position ofthe illumination optical system or a position optically conjugated withthe pupil position. Accordingly, illumination non-uniformity is notdistinctive at the pupil position of the illumination optical system ora position optically conjugated with the pupil position.

Further, the exposure apparatus according to one embodiment of thepresent invention illuminates a mask using an illumination opticalsystem according to the present invention, Thus, the pattern of a maskcan be transferred onto a photosensitive substrate with a highresolution and high throughput.

The device manufacturing method according to one embodiment of thepresent invention performs exposure with an exposure apparatus includingan illumination optical system according to the present invention. Thus,devices can be manufactured with a high throughput.

A general architecture that implements the various features of theinvention will now be described with reference to the drawings, Thedrawings and the associated descriptions are provided to illustrateembodiments of the invention and not to limit the scope of theinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram showing an exposure apparatus according toan embodiment;

FIG. 2 is a diagram showing the structure of a spatial light modulationunit in the embodiment;

FIG. 3 is a diagram showing the structure of a spatial light modulatorin the spatial light modulation unit of the embodiment;

FIG. 4 is a schematic diagram showing the structure of a conical axiconsystem in an illumination optical system according to the embodiment;

FIG. 5 is a diagram illustrating the operation of the conical axiconsystem with respect to a secondary light source formed through annularillumination according to the embodiment;

FIG. 6 is a schematic diagram showing a first cylindrical lens pair anda second cylindrical lens pair in the illumination optical systemaccording to the embodiment;

FIG. 7 is a diagram illustrating the operation of a zoom lens withrespect to a secondary light source formed through the annularillumination according to the embodiment;

FIG. 8 is a diagram showing the structure of a further illuminationoptical system according to the embodiment;

FIG. 9 is a flowchart illustrating a method for manufacturing asemiconductor device, which serves as a micro-device, according to theembodiment; and

FIG. 10 is a flowchart illustrating a method for manufacturing a liquidcrystal display device, which serves as a micro-device, according to theembodiment.

BEST MODE FOR CARRYING OUT THE INVENTION

An exposure apparatus according to an embodiment of the presentinvention will now be discussed with reference to the drawings. FIG. 1is a schematic diagram showing the structure of an exposure apparatusaccording to the embodiment. In the description hereafter, an XYZorthogonal coordinate system is set as shown in FIG. 1, and thepositional relationship of each member will be described with referenceto the XYZ orthogonal coordinate system. The XYZ orthogonal coordinatesystem is set so that the X axis and the Y axis are parallel to a waferW, and the Z axis is orthogonal to the wafer W.

With reference to FIG. 1, exposure light (illumination light) issupplied from a laser light source 1 to the exposure apparatus of thepresent embodiment. The laser light source 1 may be, for example, an ArFexcimer laser light source, which generates light having a wavelength of193 nm, or a KrF excimer laser light source, which generates lighthaving a wavelength of 248 nm. The laser light source 1 emits generallyparallel light in the Z direction. The light, which has a rectangularcross-section that is elongated in the X direction, enters a beamexpander 2, which is formed by a pair of lenses 2 a and 2 b. The lenses2 a and 2 b respectively have a negative refractive power and a positiverefractive power in a YZ plane as viewed in FIG. 1. Accordingly, thelight that enters the beam expander 2 is magnified on a YZ plane asviewed in FIG. 1 and shaped into light having a predeterminedrectangular cross-section. The parallel light that has passed throughthe beam expander 2, which serves as a shaping optical system, isreflected by a deflection mirror 3 and deflected in the Y direction.Then, the light enters a diffuser (diffusion plate) 4. The diffuser 4diffuses light, which is generally parallel to an optical axis AX, andemits the light angled to the optical axis AX. The light diffused by thediffuser 4 enters a spatial light modulation unit SM1.

As shown in FIG. 2, the spatial light modulation unit SM1 includes aprism P1 and a spatial light converter Si, which is integrally attachedto the prism P1. The prism P1, which is a rectangular parallelepiped,has a side surface in which a V-shaped, wedge-like notch is formed. Thatis, the prism P1 has a V-shaped notch foamed by two planes PS1 and PS2,which intersect each other at an obtuse angle. The two planes PS1 andPS2 are in contact with a straight line P1 a, which extends along the Xaxis shown in FIG. 2. The spatial light modulator S1 is attached to theprism P1 on a side surface that is opposite the V-shaped notch. Innersides of the two planes PS1 and PS2 function as first and secondreflection surfaces R11 and R12.

The prism P1 is arranged so that the side surface to which the spatiallight modulator S1 is attached is parallel to the optical axis AX and sothat the first reflection surface R11 is located at the side closer tothe diffuser 4 and the second reflection surface R12 is located at theside closer to an afocal lens, which will be described later. The firstreflection surface R11 of the prism P1 reflects incident light in thedirection of the spatial light modulator S1. The spatial light modulatorSi, which is arranged in an optical path between the first reflectionsurface R11 and the second reflection surface R12, reflects the lightreflected by the first reflection surface R11 toward the secondreflection surface R12. The reflection surface R12 of the prism P1reflects and emits the light reflected by the spatial light modulator S1toward the afocal lens 5.

In accordance with the position at which the light reflected by thefirst reflection surface R11 enters the spatial light modulator S1, thespatial light modulator S1 spatially modulates the light. As shown inFIG. 3, the spatial light modulator S1 includes a two-dimensional arrayof a plurality of microscopic mirror elements SE1. For example, in thelight that enters the spatial light modulator S1, a light ray L1 fallson a mirror element SE1 a, which is one of the plurality of mirrorelements SE1 of the spatial light converter Si, and a light ray L2 fallson a mirror element SE1 b, which is one of the plurality of mirrorelements SE1 of the spatial light converter S1 differing from the mirrorelement SE1 a. The mirror elements SE1 a and SE1 b respectively performspatial modulation on the light rays L1 and L2 in accordance with theirpositions.

The prism P1 is arranged so that the air-equivalent length from incidentpositions IP1 and IP2 of the light rays L1 and L2 on the prism P1 viathe mirror elements SE1 a and SE1 b to emission positions OP1 and OP2from which light is emitted is equal to the air-equivalent length frompositions corresponding to the incident positions IP1 and IP2 topositions corresponding to the emission positions OP1 and OP2 when theoptical path of exposure light does not include the prism P1. Theair-equivalent length is the optical path length when an optical pathlength in an optical system is converted to air having a refractiveindex of one. The air- equivalent length of a medium having refractiveindex n is obtained by multiplying the physical or actual optical pathlength of the medium by 1/n.

As shown in FIG. 3, the spatial light modulator S1 is a movablemulti-mirror including a plurality of mirror elements SE1, which aremicroscopic reflection elements. Each of the mirror elements SE1 ismovable and has a reflection surface. In each mirror element SE1, theorientation of the reflection surface, that is, the inclination angleand inclination direction of the reflection surface is independentlydriven and controlled by a spatial light modulator (SLM) drive unit 26,which is controlled by a control unit 20. Each mirror element SE1 iscontinuously rotatable by a desired rotation angle about two rotationaxes that extend perpendicular to each other and parallel to thereflection surface. That is, the mirror elements SE1 are eachcontrollable so as to inline two- dimensionally along the reflectionsurface. That is, the mirror elements SE1 are each controllable so as toinline two-dimensionally along the reflection surface. Here, the mirrorelements SE1 have square outlines and are flat but are not limited insuch a manner. However, from the viewpoint of light utilizationefficiency, it is preferable that the mirror elements SE1 have outlinesenabling an arrangement that eliminates gaps. It is also preferable thatthe gap between adjacent mirror elements SE1 be minimized. Further, itis preferable that the mirror elements SE1 be as small as possible sothat fine changes can be made to the illumination conditions, Moreover,the reflection surfaces of the mirror elements SE1 do not have to beplanar surfaces and may be curved surfaces such as concave surfaces andconvex surfaces.

The spatial light modulator S1 is capable of performing modifiedillumination, which forms a desired light intensity distribution that iscircular, annular, dipole-shaped, quadrupole-shaped, or the like at apupil position (pupil surface) of an illumination optical system.Specifically, a storage unit 22, which is accessible by the control unit20, stores information, for example, in the form of a lookup table, onthe inclination angle and inclination direction of the mirror elementsSE1 in the spatial light modulator S1 to form a light intensitydistribution that is circular, annular, dipole-shaped,quadrupole-shaped, or the like at the pupil position of the illuminationoptical system. Based on the information on the inclination angle andinclination direction, the control unit 20 controls the SLM drive unit26 and the inclination angle and inclination direction of each mirrorelement SE1 to form the light distribution with the desired shape at thepupil position of the illumination optical system or a positionoptically conjugated with the pupil position.

In the present embodiment, the spatial light modulator S1 is controlledso that the light distribution shape of incident light is transformedfrom a rectangular shape to an annular shape. The light that passesthrough the spatial light modulation unit SM1 enters the afocal lens 5(relay optical system) and forms an annular light intensity distributionnear a pupil position of the afocal lens 5 (and consequently theillumination optical system) or near the pupil position. The afocal lens5 is an afocal system (non- focal optical system) in which its frontfocal point is located at the same position as the spatial lightmodulator S1 and its rear focal point is located at the same position asa predetermined plane 6, which is indicated by broken lines in thedrawing. Accordingly, the light entering the spatial light modulator S1forms an annular light intensity distribution at the pupil position ofthe afocal lens 5 and is then emitted from the afocal lens 5 as parallellight. In an optical path between a front lens group 5 a and rear lensgroup 5 b of the afocal lens 5, a conical axicon system 87, a firstcylindrical lens pair 88, and a second cylindrical lens pair 89 arearranged at or near the pupil position of the illumination opticalsystem from the light source side.

FIG. 4 is a schematic diagram showing the conical axicon system 87,which is arranged at or near the pupil position of the illuminationoptical system. The conical axicon system 87 includes from the lightsource side a first prism 87 a and a second prism 87 b. The first prism87 a includes a concave, conical refraction surface (concave refractionsurface). The second prism 87 b includes a convex, conical refractionsurface (convex refraction surface) that is formed to be complement soas to enable contact with the concave, conical refraction surface of thefirst prism 87 a. The first prism 87 a is arranged so that its planarsurface faces toward the light source side and its concave, conicalrefraction surface faces toward a mask M. The second prism 87 b isarranged so that its convex, conical refraction surface faces toward thelight source and its planar surface faces toward the mask M.

At least either one of the first prism 87 a and the second prism 87 b ismovable along the optical axis AX so that the interval between theconcave, conical refraction surface of the first prism 87 a and theconvex, conical refraction surface of the second prism 87 b(hereinafter, referred to as the interval of the conical axicon system87) is variable. In a state in which the concave, conical refractionsurface of the first prism 87 a and the convex, conical refractionsurface of the second prism 87 b are in contact with each other, theconical axicon system 87 functions as a parallel planar plate and doesnot affect an annular secondary light source that is formed by a micro-lens array 10, which will be described later. However, when separatingthe concave, conical refraction surface of the first prism 87 a and theconvex, conical refraction surface of the second prism 87 b, the conicalaxicon system 87 functions as a so-called beam expander. Accordingly,when varying the interval in the conical axicon system 87, the incidentangle of the light entering the predetermined plane 6, which isindicated by the broken line in FIG. 1, is varied.

FIG. 5 includes drawings illustrating the operation of the conicalaxicon system 87 with respect to a secondary light source formed throughannular illumination. FIG. 5( a) is a drawing showing an annularsecondary light source 130 a that is in the smallest state in which theinterval in the conical axicon system 87 is zero and the focal length ofa zoom lens 7, which will be described later, is set to a minimum value(hereinafter, referred to as the “standard state”). FIG. 5( b) is adrawing showing an annular secondary light source 130 b formed in astate in which the interval in the conical axicon system 87 is increasedto a predetermined value (the focal length of the zoom lens 7 isinvariable). The width of the secondary light source 130 b in the radialdirection (a value that is ½ the difference between the outer diameterand inner diameter, indicated by the double- headed arrows in thedrawings) is the same as the width of the secondary light source 130 ain the radial direction. When increasing the interval in the conicalaxicon system 87 from zero to a predetermined value, the outer diameterand inner diameter of the annular secondary light source can beincreased from the standard state while maintaining the same radialwidth of the annular secondary light source as the standard state. Thatis, the conical axicon system 87 functions to vary the annular ratio(inner diameter/outer diameter) and size (outer diameter) of thesecondary light source without changing the radial width of the annularsecondary light source.

FIG. 6 is a schematic diagram showing the first cylindrical lens pair 88and the second cylindrical lens pair 89 arranged in an optical pathbetween the front lens group 5 a and rear lens group 5 b of the afocallens 5. As shown in FIG. 6, the first cylindrical lens pair 88 includesfrom the light source side a first cylindrical negative lens 88 a, whichhas, for example, negative refractive power in a YZ plane and norefractive power in a XY plane, and a first cylindrical positive lens 88b, which has positive refraction power in a YZ plane and no refractivepower in an XY plane. The second cylindrical lens pair 89 includes fromthe light source side a second cylindrical negative lens 89 a, whichhas, for example, negative refractive power in an XY plane and norefractive power in a YZ plane, and a second cylindrical positive lens89 b, which has positive refraction power in an XY plane and norefractive power in a YZ plane.

The first cylindrical negative lens 88 a and the first cylindricalpositive lens 88 b are formed so as to rotate integrally about theoptical axis AX. In the same manner, the second cylindrical negativelens 89 a and the second cylindrical positive lens 89 b are formed so asto rotate integrally about the optical axis AX. The first cylindricallens pair 88 functions as a beam expander having power in the Zdirection, and the second cylindrical lens pair 89 functions as a beamexpander having power in the X direction. Further, in the presentembodiment, the first cylindrical lens pair 88 and the secondcylindrical lens pair 89 are set to have the same power. Accordingly,the light that passes through the first cylindrical lens pair 88 and thesecond cylindrical lens pair 89 is subjected to a magnification effectresulting from the same powers in the Z direction and X direction.

The light that passes through the afocal lens 5 enters the zoom lens 7,which varies the o value. The predetermined plane 6 is located at ornear the front focal point of the zoom lens 7, and the micro-lens array10, which will be described later, is arranged at or near the rear focalplane of the zoom lens 7. Thus, the zoom lens 7 arranges thepredetermined plane 6 and the incidence surface of the micro-lens array10 to substantially satisfy an optical Fourier transform relationshipand consequently arranges the pupil position of the afocal lens 5 andthe incidence surface of the micro-lens array 10 to be generallyconjugated with each other. Accordingly, in the same manner as the pupilposition of the afocal lens 5, for example, an annular illuminationfield is formed about the optical axis AX on the incidence surface ofthe micro-lens array 10. The entire shape of the annular illuminationfield varies in similarity in a manner dependent on the focal length ofthe zoom lens 7. That is, the size of the secondary light source (planarlight source) formed at a position optically conjugated to the pupilposition of the illumination optical system by the micro-lens array 10is varied in similarity in a manner dependent on the focal length of thezoom lens 7 while keeping the amount of the illumination light emittedfrom the laser light source 1 substantially constant.

FIG. 7 includes drawings illustrating the operation of the zoom lens 7with respect to the secondary light source formed by the annularillumination. FIG. 7( a) is a drawing showing the annular secondarylight source 130 a that is formed in the standard state, and FIG. 7( b)is a drawing showing an annular secondary light source 130 c that isformed in a state in which the focal length of the zoom lens 7 isincreased to a predetermined value (the interval of the conical axiconsystem 87 is invariable). Referring to FIGS. 7( a) and 7(b), whenincreasing the focal length of the zoom lens 7 from the minimum value toa predetermined value, the annular secondary light source 130 a istransformed to the secondary light source 130 c by magnifying the entireshape of the annular secondary light source 130 a in similarity whilekeeping the amount of illumination light substantially constant. Thatis, the zoom lens 7 functions to vary the width and size (outerdiameter) of the annular secondary light source without changing theannular ratio of the annular secondary light source. The light thatpasses through the zoom lens 7 enters a beam splitter 8. The lightreflected by the beam splitter 8 enters a CCD imaging unit 9 (detectionunit). The CCD imaging unit 9 sends an image signal to the control unit20.

The light that passes through the beam splitter 8 enters the micro-lensarray 10, which serves as an optical integrator. The incidence angle ofthe light entering the micro-lens array 10 varies in accordance withchanges in the interval in the conical axicon system 87 in the samemanner as the angle of the light entering the predetermined plane 6. Themicro-lens array 10 is an optical device formed by a matrix of aplurality of densely arranged micro lenses having positive refractivepower. Each micro lens of the micro-lens array 10 includes a rectangularcross-section, which is in similarity with the shape of the illuminationfield that is to be formed on the mask M (i.e., a plane to be irradiatedor an irradiated plane) (consequently, the shape of the exposure regionthat is to be formed on a wafer W). The light entering the micro-lensarray 10 is divided two-dimensionally by the plurality of micro lens soas to form at a rear focal plane (consequently, an illumination pupil) asecondary light source having generally the same light distribution asthe illumination field forMed by the light entering micro-lens array 10,that is, a secondary light source, which is formed by a substantiallyannular planar light source extending about the optical axis AX.

Since in the present example the mask M located on an irradiated planeis illuminated by KOhler illumination, the plane on which this secondarylight source is formed is a plane conjugate with an aperture stop of theprojection optical system PL and can be called an illumination pupilplane of the illumination apparatus IL. Typically, the irradiated plane(the plane on which the mask M is arranged or the surface on which thewafer W is arranged) becomes an optical Fourier transform plane withrespect to the illumination pupil plane. The pupil intensitydistribution is a light intensity distribution on the illumination pupilplane of the illumination apparatus IL or on a plane conjugate with theillumination pupil plane. However, when the number of wavefrontdivisions by the micro-lens array 10 is large, an overall luminancedistribution formed on the entrance surface of the micro-lens array 10shows a high correlation with the overall intensity distribution of theentire secondary light source (pupil intensity distribution), and,therefore, the light intensity distributions on the entrance surface ofthe micro-lens array 10 and on a plane conjugate with the entrancesurface can also be called pupil intensity distributions. Concerningsuch micro-lens array 10, reference can be made to U.S. Pat. No.6,913,373, and U.S. Pat. Application Ser. No. 2008/0074631. Theteachings of U.S. Pat. No. 6,913,373, and U.S. Pat. Application No.2008/0074631 are hereby incorporated by reference. The micro-lens array10 can be termed a micro fly's eye lens.

The light from the annular secondary light source formed on the rearfocal plane of the micro-lens array 10 passes through an aperture stop12, which can be arranged at or near the rear focal plane (emissionplane) of the micro- lens array 10. The aperture stop 12 is formed, forexample, by an iris stop or the like that limits the size of thesecondary light source formed on the rear focal plane of the micro-lensarray 10 to a predetermined size. The light beam that passes through theaperture stop 12 passes through a beam splitter 14 and a condenser lens17 a and illuminates a mask blind MB in a superimposed manner. The lightreflected by the beam splitter 14 passes through a lens 15 and enters aphotodiode 16. The photodiode 16 sends a detection signal to the controlunit 20.

A rectangular illumination field, which is in accordance with the shapeand focal length of each micro lens forming the micro-lens array 10, isformed in the mask blind MB, which serves as an illumination field stop.The light beam that passes through a rectangular aperture of the maskblind MB is subjected to a light converging operation of an imagingoptical system 17 b and then reflected by a reflection mirror 19 toilluminate in a superimposing manner the mask M, on which apredetermined pattern is formed. That is, the imaging optical system 17b forms an image of the rectangular aperture in the mask blind MB on themask M, which is placed on a mask stage MS. The beam expander 2 toreflection mirror 19 and the spatial light modulation unit SM1 form anillumination optical system.

The light that passes through the pattern on the mask M forms a patternimage of the mask M on the wafer W, which is a photosensitive substrate.In this manner, the pattern of the mask M is sequentially exposed ontoeach exposure region in the mask by performing batch exposure or scanexposure while two-dimensionally drive-controlling the wafer W on awafer stage WS in a plane that is orthogonal to the optical axis AX ofthe projection optical system PL.

The exposure apparatus of the present embodiment includes the diffuserthat diffuses the illumination light entering the spatial lightmodulator, which forms the desired light intensity distribution at thepupil position of the illumination optical system or a positionoptically conjugated with the pupil position. Thus, based on thediffused illumination light, the desired light distribution can beformed by the spatial light modulator at the pupil position of theillumination optical system or a position optically conjugated with thepupil position. More specifically, when the light reflected by eachmirror element of the spatial light modulator forms the desired lightintensity distribution at the pupil position (pupil plane) of theillumination optical system, the light reflected by each mirror elementis blurred at the pupil plane of the illumination optical system. Thisforms a spot that is larger than when the diffuser 4 is not used.Accordingly, illumination non-uniformity is not distinctive at the pupilposition of the illumination optical system or a position opticallyconjugated with the pupil position. Further, the light distribution atthe pupil position of the illumination optical system or a positionoptically conjugated with the pupil position may easily have variouslight distribution shapes and may easily be varied quickly andcontinuously to have the optimal light distribution shape. Thus, thepattern of a mask may be exposed onto a wafer with a high throughput andhigh resolution.

In the exposure apparatus of the present embodiment shown in FIG. 1, theCCD imaging unit 9 detects the light intensity distribution at the pupilposition of the illumination optical system or a position opticallyconjugated with the pupil position. Further, in the exposure apparatusof the present embodiment, the exposure apparatus is arranged separatelyfrom a movable exposure stage (wafer stage WS), which holds a processedsubstrate such as the wafer W. A CCD imaging unit 39 is arranged on ameasurement stage, which supports various measurement members andsensors. Based on light that passes through both of the illuminationoptical system and the projection optical system, the CCD imaging unit39 detects the light intensity distribution at the pupil position of theillumination optical system (projection optical system) and a positionoptically conjugated with the pupil position. The employment of the CCDimaging unit 39 enables correction of influences resulting from opticalcharacteristic variations that occur as time elapses in the projectionoptical system in addition to the illumination optical system. Such aCCD imaging unit is disclosed, for example, in U.S. Patent PublicationNo. 2008/0030707. An exposure apparatus including such a measurementstage is disclosed, for example, in Japanese Laid-Open PatentPublication No. 11-135400. The teachings of Japanese Laid-Open PatentPublication No. 11-135400 and U.S. Patent Application Publication No.2008/0030707 are incorporated by reference.

In the exposure apparatus of the above-described embodiment, as shown inFIG. 8, from the viewpoint of effective use of the illumination light,it is preferable that an imaging optical system 30 be arranged betweenthe diffuser 4 and the spatial light modulation unit SM1 to transformthe illumination light diffused by the diffuser 4 to astringent lightthat enters the spatial light modulator S1 of the spatial lightmodulation unit SM1. In this case, it is further preferable that thediffuser 4 and the spatial light modulator Si of the spatial lightmodulation unit SM1 have an optically conjugated relationship.

The exposure apparatus of the above-described embodiment uses a diffuserthat isotropically diffuses illumination light. This diffuser may bereplaced by a diffuser having different diffusion characteristics(diffuser that anisotropically diffuses illumination light) to adjustthe light distribution shape of the light intensity distribution formedat the pupil position of the illumination optical system. As such adiffuser, for example, a diffuser having different diffusioncharacteristics in the longitudinal direction and lateral direction maybe used. This would enable the exposure of a pattern onto a wafer withhigh resolution and with a light intensity distribution corresponding tothe pattern shape.

In the exposure apparatus of the above-described embodiment, a spatiallight modulator that enables the orientation of two-dimensionallyarranged reflection surfaces to be separately controlled is used as thespatial light modulator including a plurality of two-dimensionallyarranged, separately controlled reflection elements. Examples of such aspatial light modulator are disclosed in Japanese National PhaseLaid-Open Patent Publication No. 10-503300 and its correspondingEuropean Patent Publication No. 779530, Japanese Laid-Open PatentPublication No. 2004-78136 and its corresponding U.S. Pat. No.6,900,915, Japanese National Phase Laid-Open Patent Publication No.2006-524349 and its corresponding U.S. Pat. No. 7,095,546, and JapaneseLaid-Open Patent Publication No. 2006-113437. In these spatial lightmodulators, light that has passed through each reflection surface of thespatial light modulator enters a distribution formation optical systemat a predetermined angle and forms a predetermined light intensitydistribution on an illumination pupil plane in correspondence with acontrol signal sent to the plurality of optical elements. The teachingsof European Patent Publication No. 779530, U.S. Pat. No. 6,900,915, andU.S. Pat. No. 7,095,546 are incorporated by reference.

Further, as the spatial light modulator, for example, a spatial lightmodulator enabling the height of two- dimensionally arranged reflectionsurfaces to be separately controlled may be used. Examples of such aspatial light modulator are disclosed in Japanese Laid-Open PatentPublication No. 6-281869 and its corresponding U.S. Pat. No. 5,312,513and Japanese National Phase Laid-Open Patent Publication No. 2004-520618and its corresponding U.S. Pat. No. 6,885,493 in FIG. 1 d. In thesespatial light modulators, the formation of a two-dimensional heightdistribution affects incident light in the same manner as a diffractionplane. The teachings of U.S. Pat. No. 5,312,513 and U.S. Pat. No.6,885,493 are incorporated by reference.

The above-described spatial light modulator including a plurality oftwo-dimensionally arranged reflection surfaces may be modified inaccordance with the disclosures of for example, Japanese National PhaseLaid-Open Patent Publication No. 2006-513442 and its corresponding U.S.Pat. No. 6,891,655 and Japanese National Phase Laid-Open PatentPublication No. 2005-524112 and its corresponding U.S. PatentApplication Publication No. 2005/0095749. The teachings of U.S. Pat. No.6,891,655 and U.S. Patent Application Publication No. 2005/0095749 areincorporated by reference.

In the above-described embodiment, the diffuser 4 and the spatial lightmodulation unit SM1 is arranged at the downstream side of the deflectionmirror 3. Instead, a spatial light modulator Si, which does not includea prism, may be arranged at the location of the deflection mirror 3, andthe diffuser 4 may be arranged at the upstream side (light source side)of the spatial light modulator Si, Further, in the exposure apparatus ofthe above-described embodiment, an ArF excimer laser light source or aKrF excimer laser light source is used. However, an F2 laser lightsource may be used instead.

In the exposure apparatus of the above-described embodiment, amicro-device (semiconductor device, imaging device, liquid crystaldisplay device, thin-film magnetic head, etc.) can be manufactured byilluminating a reticle (mask) with an illumination optical system andexposing a transfer pattern formed on a mask onto a photosensitivesubstrate (wafer) using the projection optical system (exposureprocess). One example of the procedures for obtaining a semiconductordevice serving as the micro-device by forming a predetermined circuitpattern on a wafer etc, serving as the photosensitive substrate usingthe exposure apparatus of the present embodiment will be described belowwith reference to the flowchart of FIG. 9.

First, in block S301 of FIG. 9, a metal film is vapor- deposited onto asingle lot of wafers. Next, in block S302, photoresist is applied to themetal film on the single lot of wafers. Then, in block S303, the imageof a pattern on a mask is sequentially exposed and transferred to eachshot region in the single lot of wafers with the projection opticalsystem of the exposure apparatus of the present embodiment. After thephotoresist on the single lot of wafers is developed in block S304,etching is carried out on the single lot of wafers using a resistpattern as the mask in block S305 so that a circuit patterncorresponding to the pattern on the mask is formed in each shot regionof each wafer.

Subsequently, a device such as semiconductor device is manufactured byforming circuit patterns in upper layers. The micro-device manufacturingmethod described above uses the exposure apparatus of theabove-described embodiment and thus obtains semiconductor devices havingextremely fine circuit patterns with a high throughput. In block S301 toblock S305, metal is vapor-deposited on the wafers, resist is applied tothe metal film, and the processes of exposure, development, and etchingare performed. However, it is obvious that prior to such processes, asilicon oxide film may be formed on the wafers. Then, resist may beapplied o the silicon oxide film, and the processes of exposure,development, etching, and the like may be performed.

In the exposure apparatus of the present embodiment, a liquid crystaldisplay device serving as a micro-device can be obtained by forming apredetermined pattern (circuit pattern, electrode pattern etc.) on aplate (glass substrate). One example of the procedures taken in thisease will now be described with reference to the flowchart of FIG. 10.In FIG. 10, a so-called photolithography block of transferring andexposing a pattern of a mask onto a photosensitive substrate (glasssubstrate coated with resist or the like) using the exposure apparatusof the above-described embodiment is performed in a pattern formationblock 5401. A predetermined pattern including many electrodes or thelike is formed on the photosensitive substrate through thephotolithography block. The exposed substrate then undergoes blocksincluding a development block, an etching block, and a resist removalblock to form a predetermined pattern on the substrate. Then, the nextcolor filter formation block 5402 is performed.

In the color filter formation block 5402, a color filter is formed inwhich a plurality of sets of three dots corresponding to R (Red), G(Green), and B (Blue) are arranged in a matrix or in which a pluralityof sets of three stripe filters of R, G, and B are arranged extending ina horizontal scanning line direction. After the color filter formationblock 5402, a cell assembling block 5403 is performed. In the cellassembling block 5403, a liquid crystal panel (liquid crystal cell) isassembled using the substrate having the predetermined pattern obtainedin the pattern formation block 5401 and the color filter obtained in thecolor filter formation block S402. In the cell assembling block S403, aliquid crystal panel (liquid crystal cell) is manufactured by injectingliquid crystal between the substrate having the predetermined patternobtained in the pattern formation block S401 and the color filterobtained in the color filter formation block S402.

Thereafter, in a module assembling block S404, components such aselectric circuits and a backlight for enabling a display operation ofthe assembled liquid crystal panel (liquid crystal cell) are mounted tocomplete a liquid crystal display device. In the above describedmanufacturing method for a liquid crystal display device, exposure isperformed using the exposure apparatus of the above- describedembodiment. Thus, semiconductor devices having extremely fine circuitpatterns are obtained with a high throughput.

In the foregoing embodiments, it is also possible to apply a techniqueof filling the interior of the optical path between the projectionoptical system and the photosensitive substrate with a medium having therefractive index larger than 1.1 (typically, a liquid), which is socalled a liquid immersion method. In this case, it is possible to adoptone of the following techniques as a technique of filing the interior ofthe optical path between the projection optical system and thephotosensitive substrate with the liquid: the technique of locallyfilling the optical path with the liquid as disclosed in InternationalPublication W099/49504; the technique of moving a stage holding thesubstrate to be exposed, in a liquid bath as disclosed in JapanesePatent Application Laid-open No. 6-124873; the technique of forming aliquid bath of a predetermined depth on a stage and holding thesubstrate therein as disclosed in Japanese Patent Application Laid-openNo. 10-303114, and so on. International Publication W099/49504, JapanesePatent Application Laid-open No. 6-124873, and Japanese PatentApplication Laid-open No. 10-303114 are incorporated as referencesherein.

In the foregoing embodiment, it is also possible to apply the so-calledpolarized illumination method disclosed in U.S. Pat. PublishedApplication Nos. 2006/0203214, 2006/0170901, and 200-770146676.Teachings of the U.S Pat. Published Application Nos. 2006/0203214,2006/0170901, and 2007/0146676 are incorporated herein by reference.

The application of the present invention is not limited to an exposureapparatus for manufacturing a semiconductor device. The presentinvention may also be applied to exposure apparatuses for a liquidcrystal display device formed on a rectangular glass plate or for adisplay device such as a plasma display device. The present inventionmay also be widely applied to exposure apparatuses that manufacturevarious types of devices, such as an imaging device (CCD and the like),a micro-machine, a thin- film magnetic head, and a DNA chip. Further,the present invention may be applied to an exposure process (exposureapparatus) used when manufacturing various types of devices to form amask (photomask, reticle, etc.) including a mask pattern duringlithography.

The invention is not limited to the fore going embodiments but variouschanges and modifications of its components may be made withoutdeparting from the scope of the present invention. Also, the componentsdisclosed in the embodiments may be assembled in any combination forembodying the present invention. For example, some of the components maybe omitted from all components disclosed in the embodiments. Further,components in different embodiments may be appropriately combined.

1. An illumination optical system which illuminates an irradiated planewith illumination light provided from a light source and which is usedin combination with a projection optical system for projecting a patternarranged on the irradiated plane onto a photosensitive substrate, theillumination optical system comprising: a diffuser which is arranged inan optical path of the illumination optical system and diffuses theentering illumination light; a spatial light modulator which is arrangedbetween the diffuser and the irradiated plane and which includes aplurality of elements two-dimensionally arranged and controllableindependently from one another, the plurality of elements receiving theillumination light diffused by the diffuser; the first optical systemwhich is arranged in an optical path between the spatial light modulatorand the irradiated plane and which distributes the light from thespatial light modulator to form a desirable light intensity distributionat a position optically conjugated with the pupil position of theprojection optical system; and a second optical system having an imagingoptical system arranged in an optical path between the diffuser and thespatial light modulator.